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 BUV48A
High voltage fast switching NPN power transistor
Features

NPN transistor High voltage capability High current capability Fast switching speed
Applications
3

Switching mode power supplies Flyback and forward single transistor low power convertes Figure 1. TO-247
2 1
Description
The device is a multiepitaxial mesa NPN transistor mounted in TO-247 plastic package. It is intended for switching and industrial applications from single and three-phase mains.
Internal schematic diagram
Table 1.
Device summary
Marking BUV48A Package TO-247 Packaging Tube
Order code BUV48A
October 2007
Rev 8
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www.st.com 8
Absolute maximum ratings
BUV48A
1
Absolute maximum ratings
Table 2.
Symbol VCER VCES VCEO VEBO IC ICM ICP IB IBM PTOT Tstg TJ
Absolute maximum ratings
Parameter Collector-emitter voltage (RBE = 10) Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current Collector peak current non repetitive (tp < 20s) Base current Base peak current Total dissipation at Tcase = 25C Storage temperature Max. operating junction temperature Value 1000 1000 450 7 15 30 55 4 20 125 -65 to 150 150 Unit V V V V A A A A A W C C
Table 3.
Symbol Rthj-case
Thermal data
Parameter Thermal resistance junction-case __max Value 1 Unit C/W
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BUV48A
Electrical characteristics
2
Electrical characteristics
(Tcase = 25C; unless otherwise specified) Table 4.
Symbol ICES
Electrical characteristics
Parameter Collector cut-off current (V BE = 0) Collector cut-off current (R BE = 10) Emitter cut-off current (IC = 0) Test conditions VCE = 1000 V VCE = 1000 V VCE = 1000 V VCE = 1000 V VEB = 5V Tc = 125C Tc = 125C Min. Typ. Max. 200 2 500 4 1 Unit A mA A mA mA
ICER
IEBO
Collector-emitter VCEO(sus)(1) sustaining voltage (IB = 0) VEBO VCE(sat)(1) VBE(sat)(1) Emitter-base voltage (IC = 0) Collector-emitter saturation voltage Base-emitter saturation voltage Resistive load Turn-on time Storage time Fall time Inductive load Storage time Fall time Inductive load Storage time Fall time
IC = 200mA
450
V
IE = 50mA IC = 8A IC = 12A IC = 8A VCC = 150V IB1 = -IB2 = 1.6A IB = 1.6A IB = 2.4A IB = 1.6A IC = 8A
7
30 1.5 5 1.6
V V V V
ton ts tf
1 3 0.8
s s s s s
VCC = 300 V VBE = -5V LB = 3H VCC = 300 V VBE = -5V LB = 3H
IC = 8A IB1 = 1.6A 3 0.13 IC = 8A IB1 = 1.6A T C = 125oC 5 0.4 s s
ts tf
ts tf
1. Pulsed duration = 300 ms, duty cycle 2%.
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Electrical characteristics
BUV48A
2.1
Test circuit
Figure 2. Resistive load switching test circuit
1) Fast electronic switch 2) Non-inductive resistor
Figure 3.
Inductive load switching test circuit
1) Fast electronic switch 2) Non-inductive resistor 3) Fast recovery rectifier
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BUV48A
Package mechanical data
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
BUV48A
TO-247 Mechanical data
mm. Min. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Typ Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75
Dim. A A1 b b1 b2 c D E e L L1 L2 oP oR S
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BUV48A
Revision history
4
Table 5.
Revision history
Document revision history
Revision 7 8 Package change from TO-218 to TO-247. Changes
Date 02-Jan-2000 29-Oct-2007
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BUV48A
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